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GPA030A135MN-FDR
Part number:
GPA030A135MN-FDR
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
SemiQ
describe:
IGBT 1350V 60A 329W TO3PN
package:
ROHS status:
Yes
currency:
USD
PDF:
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inventory 1600
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specifications
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • IGBT Type
    Trench Field Stop
  • Package / Case
    TO-3P-3, SC-65-3
  • Input Type
    Standard
  • Current - Collector (Ic) (Max)
    60 A
  • Current - Collector Pulsed (Icm)
    90 A
  • Supplier Device Package
    TO-3PN
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Reverse Recovery Time (trr)
    450 ns
  • Power - Max
    329 W
  • Td (on/off) @ 25°C
    30ns/145ns
  • Gate Charge
    300 nC
  • Test Condition
    600V, 30A, 5Ohm, 15V
  • Switching Energy
    4.4mJ (on), 1.18mJ (off)

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