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GT10J312(Q)
Part number:
GT10J312(Q)
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
IGBT 600V 10A 60W TO220SM
package:
ROHS status:
None
currency:
USD
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inventory 1600
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specifications
  • Mounting Type
    Through Hole
  • Power - Max
    60 W
  • Operating Temperature
    150°C (TJ)
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    200 ns
  • Package / Case
    TO-262-3 Long Leads, I2PAK, TO-262AA
  • Current - Collector (Ic) (Max)
    10 A
  • Current - Collector Pulsed (Icm)
    20 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 10A
  • Td (on/off) @ 25°C
    400ns/400ns
  • Test Condition
    300V, 10A, 100Ohm, 15V

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