collect compare
GT20N135SRA,S1E
Part number:
GT20N135SRA,S1E
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
IGBT 1350V 40A TO247
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 1610
minimum : 0
quantity
unit price
price
1
3.21
3.21
10
2.89
28.9
30
2.73
81.9
120
2.36
283.2
270
2.24
604.8
510
2.01
1025.1
1020
1.7
1734
2520
1.61
4057.2
5010
1.55
7765.5
specifications
  • Mounting Type
    Through Hole
  • Current - Collector (Ic) (Max)
    40 A
  • Current - Collector Pulsed (Icm)
    80 A
  • Input Type
    Standard
  • Operating Temperature
    175°C (TJ)
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 40A
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247
  • Power - Max
    312 W
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Switching Energy
    -, 700µJ (off)
  • Gate Charge
    185 nC
  • Test Condition
    300V, 40A, 39Ohm, 15V

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