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GT30J341,Q
Part number:
GT30J341,Q
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
IGBT 600V 59A TO3P
package:
Tray
ROHS status:
Yes
currency:
USD
PDF:
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inventory 1706
minimum : 0
quantity
unit price
price
1
3.33
3.33
10
3
30
25
2.83
70.75
100
2.45
245
300
2.33
699
500
2.09
1045
1000
1.76
1760
2400
1.67
4008
4900
1.61
7889
specifications
  • Mounting Type
    Through Hole
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Package / Case
    TO-3P-3, SC-65-3
  • Input Type
    Standard
  • Operating Temperature
    175°C (TJ)
  • Reverse Recovery Time (trr)
    50 ns
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • Supplier Device Package
    TO-3P(N)
  • Current - Collector Pulsed (Icm)
    120 A
  • Current - Collector (Ic) (Max)
    59 A
  • Power - Max
    230 W
  • Test Condition
    300V, 30A, 24Ohm, 15V
  • Switching Energy
    800µJ (on), 600µJ (off)
  • Td (on/off) @ 25°C
    80ns/280ns

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