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GT30N135SRA,S1E
Part number:
GT30N135SRA,S1E
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
IGBT 1350V 60A TO247
package:
Tube
ROHS status:
Yes
currency:
USD
BUY NOW add to cart
inventory 1601
minimum : 0
quantity
unit price
price
1
3.69
3.69
10
3.32
33.2
30
3.14
94.2
120
2.72
326.4
270
2.58
696.6
510
2.31
1178.1
1020
1.95
1989
2520
1.85
4662
5010
1.78
8917.8
specifications
  • Mounting Type
    Through Hole
  • Input Type
    Standard
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247
  • Current - Collector (Ic) (Max)
    60 A
  • Gate Charge
    270 nC
  • Current - Collector Pulsed (Icm)
    120 A
  • Power - Max
    348 W
  • Voltage - Collector Emitter Breakdown (Max)
    1350 V
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 60A
  • Switching Energy
    -, 1.3mJ (off)
  • Test Condition
    300V, 60A, 39Ohm, 15V

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