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GT50JR22(STA1,E,S)
Part number:
GT50JR22(STA1,E,S)
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
PB-F IGBT / TRANSISTOR TO-3PN(OS
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 0
quantity
unit price
price
1
4.7
4.7
25
3.72
93
100
3.19
319
500
2.84
1420
1000
2.43
2430
2000
2.29
4580
specifications
  • Mounting Type
    Through Hole
  • Current - Collector (Ic) (Max)
    50 A
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Package / Case
    TO-3P-3, SC-65-3
  • Input Type
    Standard
  • Operating Temperature
    175°C (TJ)
  • Current - Collector Pulsed (Icm)
    100 A
  • Supplier Device Package
    TO-3P(N)
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 50A
  • Power - Max
    230 W

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