collect compare
GT50N322A
Part number:
GT50N322A
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
IGBT 1000V 50A TO3P
package:
Tray
ROHS status:
Yes
currency:
USD
PDF:
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inventory 1697
minimum : 0
quantity
unit price
price
1
4.68
4.68
10
3.93
39.3
50
3.71
185.5
100
3.18
318
250
3
750
450
2.83
1273.5
950
2.42
2299
2400
2.28
5472
specifications
  • Mounting Type
    Through Hole
  • Operating Temperature
    150°C (TJ)
  • Current - Collector (Ic) (Max)
    50 A
  • Package / Case
    TO-3P-3, SC-65-3
  • Input Type
    Standard
  • Supplier Device Package
    TO-3P(N)
  • Current - Collector Pulsed (Icm)
    120 A
  • Reverse Recovery Time (trr)
    800 ns
  • Voltage - Collector Emitter Breakdown (Max)
    1000 V
  • Power - Max
    156 W
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 60A

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