collect compare
GT60N321(Q)
Part number:
GT60N321(Q)
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Toshiba Electronic Devices and Storage Corporation
describe:
IGBT 1000V 60A 170W TO3P LH
package:
ROHS status:
None
currency:
USD
PDF:
RFQ Add to RFQ list
inventory 1600
Please send an inquiry form, we will reply immediately
Quick inquiry
specifications
  • Mounting Type
    Through Hole
  • Operating Temperature
    150°C (TJ)
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    2.5 µs
  • Current - Collector (Ic) (Max)
    60 A
  • Current - Collector Pulsed (Icm)
    120 A
  • Voltage - Collector Emitter Breakdown (Max)
    1000 V
  • Power - Max
    170 W
  • Package / Case
    TO-3PL
  • Supplier Device Package
    TO-3P(LH)
  • Vce(on) (Max) @ Vge, Ic
    2.8V @ 15V, 60A
  • Td (on/off) @ 25°C
    330ns/700ns

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.