collect compare
HGT1S12N60B3D
Part number:
HGT1S12N60B3D
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Harris Corporation
describe:
27A, 600V, N-CHANNEL IGBT
package:
ROHS status:
None
currency:
USD
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inventory 2000
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quantity
unit price
price
1
1.36
1.36
specifications
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Input Type
    Standard
  • Package / Case
    TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package
    I2PAK (TO-262)
  • Power - Max
    104 W
  • Current - Collector (Ic) (Max)
    27 A
  • Gate Charge
    78 nC
  • Current - Collector Pulsed (Icm)
    110 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 12A
  • Test Condition
    480V, 12A, 25Ohm, 15V
  • Switching Energy
    304µJ (on), 250µJ (off)
  • Td (on/off) @ 25°C
    26ns/150ns

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