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HGTG30N60B3
Part number:
HGTG30N60B3
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Harris Corporation
describe:
600 V, NPT IGBT
package:
ROHS status:
None
currency:
USD
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inventory 17753
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quantity
unit price
price
1
3.16
3.16
specifications
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Input Type
    Standard
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247
  • Current - Collector (Ic) (Max)
    60 A
  • Current - Collector Pulsed (Icm)
    220 A
  • Gate Charge
    170 nC
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 30A
  • Power - Max
    208 W
  • Td (on/off) @ 25°C
    36ns/137ns
  • Test Condition
    480V, 30A, 3Ohm, 15V
  • Switching Energy
    500µJ (on), 680µJ (off)

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