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MII100-12A3
Part number:
MII100-12A3
CLASSIFICATION:
Discrete Semiconductor Products
manufacturer:
Littelfuse / IXYS RF
describe:
IGBT MODULE 1200V 135A 560W Y4M5
package:
ROHS status:
Yes
currency:
USD
PDF:
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inventory 1600
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specifications
  • Mounting Type
    Chassis Mount
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input
    Standard
  • NTC Thermistor
    No
  • IGBT Type
    NPT
  • Configuration
    Half Bridge
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    5.5 nF @ 25 V
  • Current - Collector (Ic) (Max)
    135 A
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 75A
  • Package / Case
    Y4-M5
  • Supplier Device Package
    Y4-M5
  • Power - Max
    560 W

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