collect compare
MIW50N65F-BP
Part number:
MIW50N65F-BP
describe:
IGBT 650V 40A TO-247
package:
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 1600
minimum : 0
quantity
unit price
price
1
2.48
2.48
specifications
  • Mounting Type
    Through Hole
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • IGBT Type
    Trench Field Stop
  • Input Type
    Standard
  • Package / Case
    TO-247-3
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector Pulsed (Icm)
    200 A
  • Supplier Device Package
    TO-247AB
  • Current - Collector (Ic) (Max)
    85 A
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 50A
  • Power - Max
    326 W
  • Switching Energy
    1.27mJ (on), 650µJ (off)
  • Gate Charge
    450 nC
  • Td (on/off) @ 25°C
    55ns/319ns
  • Test Condition
    300V, 50A, 10Ohm, 15V