TRS12E65C,S1Q
Part Number:
TRS12E65C,S1Q
Product Classification:
Single Diodes
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
DIODE SIL CARB 650V 12A TO220-2L
Packaging:
-
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Through Hole
- Technology SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max) 650 V
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Package / Case TO-220-2
- Operating Temperature - Junction 175°C (Max)
- Current - Average Rectified (Io) 12A
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
- Current - Reverse Leakage @ Vr 90 µA @ 170 V
- Capacitance @ Vr, F 65pF @ 650V, 1MHz
- Supplier Device Package TO-220-2L