GB10SLT12-252
Part Number:
GB10SLT12-252
Product Classification:
Single Diodes
Manufacturer:
GeneSiC Semiconductor
Description:
DIODE SIL CARB 1.2KV 10A TO252
Packaging:
-
ROHS Status:
Yes
Currency:
USD
Specification
- Mounting Type Surface Mount
- Technology SiC (Silicon Carbide) Schottky
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Operating Temperature - Junction -55°C ~ 175°C
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package TO-252
- Current - Average Rectified (Io) 10A
- Voltage - DC Reverse (Vr) (Max) 1200 V
- Voltage - Forward (Vf) (Max) @ If 2 V @ 10 A
- Current - Reverse Leakage @ Vr 250 µA @ 1200 V
- Capacitance @ Vr, F 520pF @ 1V, 1MHz