RN1961FE(TE85L,F)
Part Number:
RN1961FE(TE85L,F)
Product Classification:
Bipolar Transistor Arrays, Pre-Biased
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Packaging:
-
ROHS Status:
No
Currency:
USD
Specification
- Mounting Type Surface Mount
- Current - Collector Cutoff (Max) 100nA (ICBO)
- Frequency - Transition 250MHz
- Voltage - Collector Emitter Breakdown (Max) 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
- Current - Collector (Ic) (Max) 100mA
- Power - Max 100mW
- Package / Case SOT-563, SOT-666
- Supplier Device Package ES6
- Transistor Type 2 NPN - Pre-Biased (Dual)
- Resistor - Base (R1) 4.7kOhms
- Resistor - Emitter Base (R2) 4.7kOhms